鍺烯是單層原子構成的材料。[2][3]該材料的製造工藝類似於矽烯石墨烯,即在高真空高溫環境中在基板上沉積鍺原子層。高質量的鍺烯薄膜揭示了具有新穎電子特性的不尋常二維結構,這種結構適用於半導體器件應用和材料科學研究。

鍺烯
識別
CAS號 1456602-68-8  checkY
若非註明,所有數據均出自標準狀態(25 ℃,100 kPa)下。
(a)鍺烯的STM圖像。(b)剖面((a)中的黑線)顯示了〜3.2Å的台階高度。(c)高解像度STM圖像(因樣品漂移而失真)。(d)沿(c)中白色實線和虛線的剖面顯示,高度〜0.2Å的凸起之間的間距約為9-10Å。(e)電子繞射圖樣。(f)金(111)上的鍺烯模型。[1]

製備和結構

編輯

2014年9月,G. Le Lay等人報告了在米勒指數(111)的晶格上用分子束外延沉積了單原子厚的有序的二維多相膜。掃描隧道顯微鏡(STM)確認了該結構並揭示了近乎平面的蜂窩狀結構。[4]

我們已經為近乎平面的鍺烯——大自然中不存在的嶄新的人工合成的鍺的同素異形體——的誕生提供了確鑿的證據。它是石墨烯的新表親。

——艾克斯-馬賽大學的Guy Le Lay,新物理學雜誌

光譜測量和密度泛函理論計算提供了進一步的證據。高質量和近乎平坦的單原子膜的發展引起人們的猜測,即鍺烯不僅可以增加相關的納米材料的新性質,甚至可以替代石墨烯[2][5][6][7][8]

Bampoulis等人[9]報告了在Ge2Pt納米晶體的最外層上形成了鍺烯。Ge2Pt納米晶體上鍺烯的原子解像度的STM圖像顯示了彎曲的蜂窩結構。該蜂窩狀晶格由兩個在垂直方向上相距0.2Å的六邊形子晶格組成。最近的鄰距離為2.5±0.1Å,與鍺烯中的Ge-Ge距離非常吻合。

基於STM觀察和密度泛函理論計算,在上形成的顯着地更扭曲的鍺烯也已經被報道。[4][10]砷化鎵(0001)上鍺晶體的外延生長也被實現,計算結果暗示表明最小的相互作用應使鍺烯能容易地從該基底上除去。[11]

鍺烯的結構被描述為「IV族類石墨烯二維屈曲納米片」。[12]額外的鍺吸附在類石墨烯片材上會導致「啞鈴」單元的形成,每個單元都有兩個平面外的鍺原子,分別在平面的兩側。啞鈴之間會互相吸引。啞鈴結構的周期性重複排列可能會導致鍺烯的其他穩定相形成,從而改變其電磁性質。[13]

2018年10月,Junji Yuhara等人報道說,使用偏析方法可以更容易地進行鍺烯的製備,即在鍺襯底上使用裸露的銀膜並在原位實現其外延生長。[14]類似石墨烯和矽烯一樣使用偏析方法的鍺烯生長工藝被認為在更簡易地合成和轉移這種很有前途的二維電子材料上有重要意義。

性質

編輯

鍺烯的電子和光學性質已用從頭計算法確定[15],其結構和電子性質也已用第一性原理確定。[16][17]這些特性使得該材料適用於高性能場效應電晶體(FET) [18]的溝道,並引法了在其他電子設備中使用單原子層元素的討論。[19]鍺烯的電子性質是不同尋常的,並能讓人們難得地測試狄拉克費米子的性質。[20][21]鍺烯沒有能隙,但是在每個鍺原子上都連接一個氫原子會帶來能隙。[22]這些不尋常的性能在石墨烯矽烯,鍺烯,錫烯英語Stanene鉛烯等材料中比較常見。[23][24][25]

參考文獻

編輯
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外部連結

編輯